Citation:
Bao An GONG, Xiao Li HAN, Dai Qing LI, Ting Qi REN, Ya WAN. STUDIES OF THE LATTICE DAMAGE CAUSED BY ION IMPLANTATION INTO AlxGa1-xAS/GaAs[J]. Chinese Chemical Letters,
;1994, 5(8): 707-710.
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The lattice damage produced in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and elevated temperature was investigated by using Rutherford backscattering/channeling (RBS/C) technique and the results of the damage accumulation observed in the experiment are explained by the relative bond strength obtained from molecular-orbital calculation of a group of atomic cluster simulated GaAs and AlxGa1-xAs/GaAs.
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