Citation: Yiwen Liu, Yongfei Wang, Xiao Li, Zhizhi Hu. A thermally crosslinked ion-gel gated artificial synapse[J]. Chinese Chemical Letters, ;2023, 34(3): 107842. doi: 10.1016/j.cclet.2022.107842 shu

A thermally crosslinked ion-gel gated artificial synapse

Key Laboratory for Functional Materials, School of Chemical Engineering, University of Science and Technology Liaoning, Anshan 114051, China

wyf8307@ustl.edu.cn

lixiao@ustl.edu.cn

Received Date: 24 July 2022
Revised Date: 22 August 2022
Accepted Date: 20 September 2022
Available Online: 23 September 2022

Figures(5)

We demonstrate a synaptic transistor that uses a thermally crosslinked three-dimensional network to accommodate ionic liquid to form an ion gel layer. The synaptic transistor successfully emulated important synaptic plasticity, such as paired-pulse facilitation, spike-number dependent plasticity, spike-voltage dependent plasticity, and spike-rate dependent plasticity; these responses imply successful use of the ion gel. Moreover, the device realized "OR" and "AND" logic operations, and high-pass filtering behavior. Energy consumption of the device can be reduced to sub-femtojoule level, which is below that of biological synapses. Compared with traditional physical cross-linking using block copolymers, this method provides a facile strategy to prepare ion gels with tunable properties by altering the polymers and crosslinkers, and to enormously reduce the price by replacing expensive block copolymers or eliminating additional synthesis processes. This report provides a versatile strategy for design of synaptic transistors and their applications in neuromorphic electronics.
- Synaptic transistor,
- Thermal cross-linking,
- Ion gel,
- Logic operations,
- High-pass filtering
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