Citation: Xiaojuan Dai, Liyao Liu, Zhen Ji, Qing Meng, Ye Zou. Surface charge transfer doping of graphene using a strong molecular dopant CN6-CP[J]. Chinese Chemical Letters, ;2023, 34(3): 107239. doi: 10.1016/j.cclet.2022.02.044 shu

Surface charge transfer doping of graphene using a strong molecular dopant CN6-CP

Xiaojuan Dai ^a ,
Liyao Liu ^a ,
Zhen Ji ^{a, b} ,
Qing Meng ^a ,
Ye Zou ^{a, *,}

a.
Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
b.
School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

zouye@iccas.ac.cn

Received Date: 9 February 2022
Revised Date: 14 February 2022
Accepted Date: 16 February 2022
Available Online: 19 February 2022

Figures(4)

Surface charge transfer doping of graphene plays an important role in graphene-based electronics due to its simplicity, high doping efficiency, and easy-controllability. Here, we demonstrate the effective surface charge transfer hole doping of graphene by using a strong p-type molecular dopant hexacyano-trimethylene-cyclopropane (CN6-CP). The CN6-CP exhibits a very high intrinsic work function of 6.37 eV, which facilitates remarkable electron transfer from graphene to CN6-CP as revealed by in situ photoelectron spectroscopy investigations. Consequently, hole accumulation appears in the graphene layer at the direct contact with CN6-CP. As evidenced by Hall effect measurements, the areal hole density of graphene significantly increased from 8.3 × 10¹² cm⁻² to 2.21 × 10¹³ cm⁻² upon 6 nm CN6-CP evaporation. The CN6-CP acceptor with strong p-doping effect has great implications for both graphene-based and organic electronics.
- Graphene,
- Surface charge transfer doping,
- Molecular dopant,
- CN6-CP,
- Hall effect
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