Citation: Junqiang Yang, Xiaochi Liu, Qianli Dong, Yaqi Shen, Yuchuan Pan, Zhongwang Wang, Kui Tang, Xianfu Dai, Rongqi Wu, Yuanyuan Jin, Wei Zhou, Song Liu, Jian Sun. Oxidations of two-dimensional semiconductors: Fundamentals and applications[J]. Chinese Chemical Letters, ;2022, 33(1): 177-185. doi: 10.1016/j.cclet.2021.06.078 shu

Oxidations of two-dimensional semiconductors: Fundamentals and applications

Junqiang Yang ^{a, 1} ,
Xiaochi Liu ^{a, 1} ,
Qianli Dong ^a ,
Yaqi Shen ^a ,
Yuchuan Pan ^a ,
Zhongwang Wang ^a ,
Kui Tang ^a ,
Xianfu Dai ^a ,
Rongqi Wu ^a ,
Yuanyuan Jin ^b ,
Wei Zhou ^b ,
Song Liu ^b ,
Jian Sun ^{a, *,}

a.
School of Physics and Electronics, Central South University, Changsha 410083, China
b.
State Key Laboratory of Chemical Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Institute of Chemical Biology and Nanomedicine (ICBN), Hunan University, Changsha 410082, China

jian.sun@csu.edu.cn

Received Date: 22 May 2021
Revised Date: 15 June 2021
Accepted Date: 27 June 2021
Available Online: 8 July 2021

Figures(8)

Since the discovery of graphene, two-dimensional (2D) semiconductors have been attracted intensive interest due to their unique properties. They have exhibited potential applications in next generation electronic and optoelectronic devices. However, most of the 2D semiconductor are known to suffer from the ambient oxidation which degrade the materials and therefore hinder us from the intrinsic materials' properties and the optimized performance of devices. In this review, we summarize the recent progress on both fundamentals and applications of the oxidations of 2D semiconductors. We begin with the oxidation mechanisms in black phosphorus, transition metal dichalcogenides and transition metal monochalcogenides considering the factors such as oxygen, water, and light. Then we show the commonly employed passivation techniques. In the end, the emerging applications utilizing controlled oxidations will be introduced.
- Two-dimensional materials,
- Oxidation,
- Passivation,
- Surface modification,
- Doping
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沈阳化工大学材料科学与工程学院沈阳 110142