Citation: Luo Yiqi, Liu Zhengdong, Wu Geng, Wang Guanzhong, Chao Tingting, Li Hai, Liu Juqing, Hong Xun. Anisotropic Cu@Cu-BTC core-shell nanostructure for memory device[J]. Chinese Chemical Letters, ;2019, 30(5): 1093-1096. doi: 10.1016/j.cclet.2018.11.008 shu

Anisotropic Cu@Cu-BTC core-shell nanostructure for memory device

Luo Yiqi ^a,b,1 ,
Liu Zhengdong ^c,1 ,
Wu Geng ^a ,
Wang Guanzhong ^b ,
Chao Tingting ^a ,
Li Hai ^c ,
Liu Juqing ^c,*, ,
Hong Xun ^a,*,

a.
Center of Advanced Nanocatalysis (CAN) and Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
b.
Department of Physics, University of Science and Technology of China, Hefei 230026, China
c.
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, Nanjing 211816, China

iamjqliu@njtech.edu.cn

hongxun@ustc.edu.cn

Received Date: 22 September 2018
Revised Date: 30 October 2018
Accepted Date: 30 October 2018
Available Online: 15 May 2018

Figures(4)

The activity and stability of Cu nanostructures strongly depend on their sizes, morphology and structures. Here we report the preparation of two-dimensional (2D) Cu@Cu-BTC core-shell nanosheets (NSs). The thickness of the Cu NSs could be tuned to sub-10 nm through a mild etching process, in which the Cu-BTC in situ grow along with the oxidation on the surface of the Cu NSs. This unique strategy can also be extended to synthesize one-dimensional (1D) Cu@Cu-BTC nanowires (NWs). Furthermore, the obtained Cu@Cu-BTC NSs could be applied as an effective material to the memory device with the write-onceread-many times (WORM) behavior and the high I_ON/I_OFF ratio (>2.7×10³).
- Copper,
- Anisotropic,
- Core-shell,
- MOF,
- Memory device
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