引用本文:
Bing Xia, Qiang Miao, Jie Chao, Shou Jun Xiao, Hai Tao Wang, Zhong Dang Xiao. Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy[J]. Chinese Chemical Letters,
2008, 19(2): 199-202.
doi:
10.1016/j.cclet.2007.12.003
Citation: Bing Xia, Qiang Miao, Jie Chao, Shou Jun Xiao, Hai Tao Wang, Zhong Dang Xiao. Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy[J]. Chinese Chemical Letters, 2008, 19(2): 199-202. doi: 10.1016/j.cclet.2007.12.003
Citation: Bing Xia, Qiang Miao, Jie Chao, Shou Jun Xiao, Hai Tao Wang, Zhong Dang Xiao. Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy[J]. Chinese Chemical Letters, 2008, 19(2): 199-202. doi: 10.1016/j.cclet.2007.12.003
Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy
摘要:
A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by currentsensing atomic force microscopy.The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity > 55%.We propose that the conductance mode in the porous silicon membrane with porosities > 55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤ 55%, electron flows through a direct continuous channel between nano-crystallites.
English
Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy
Abstract:
A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by currentsensing atomic force microscopy.The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity > 55%.We propose that the conductance mode in the porous silicon membrane with porosities > 55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤ 55%, electron flows through a direct continuous channel between nano-crystallites.
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Key words:
- Porous silicon
- / Current sensing AFM
- / Electron transfer
- / Porosity
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