Citation: Wenjuan Huang, Yue Zhang, Mengting Song, Bugao Wang, Huayi Hou, Xiaozong Hu, Xiangbai Chen, Tianyou Zhai. Encapsulation strategies on 2D materials for field effect transistors and photodetectors[J]. Chinese Chemical Letters, ;2022, 33(5): 2281-2290. doi: 10.1016/j.cclet.2021.08.086 shu

Encapsulation strategies on 2D materials for field effect transistors and photodetectors

Wenjuan Huang ^{a, b} ,
Yue Zhang ^a ,
Mengting Song ^a ,
Bugao Wang ^a ,
Huayi Hou ^a ,
Xiaozong Hu ^c ,
Xiangbai Chen ^{a, *,} ,
Tianyou Zhai ^{b, *,}

a.
Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China
b.
State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
c.
Green Catalysis Center, College of Chemistry, Zhengzhou University, Zhengzhou 450001, China

xchen@wit.edu.cn

zhaity@hust.edu.cn

Received Date: 20 June 2021
Revised Date: 2 August 2021
Accepted Date: 18 August 2021
Available Online: 21 August 2021

Figures(8)

Two-dimensional (2D) layered materials provide a promising alternative solution for overcoming the scaling limits in conventional Si-based devices. However, practical applications of 2D materials are facing crucial bottlenecks, particularly that arising from the instability under ambient condition. The studies of degradation mechanisms and protecting strategies for overcoming the ambient instability of 2D materials have attracted extensive research attentions, both experimentally and theoretically. This review attempts to provide an overview on the recent progress of the encapsulation strategies for 2D materials. The encapsulation strategies of mechanical transfer, polymer capping, atomic layer deposition, in-situ oxidation, and surface functionalization are systematically discussed for improving the ambient stability of 2D materials. In addition, the current advances in air-stable and high-performance 2D materials-based field effect transistors (FETs) and photodetectors assisted by the encapsulation strategies are outlined. Furthermore, the future directions of encapsulation techniques of 2D materials for FETs and photodetectors applications are suggested.
- Two-dimensional materials,
- Encapsulation,
- Degradation,
- Stability,
- Field effect transistors,
- Photodetectors
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